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TLP3064 TOSHIBA Photocoupler GaAs Ired & Photo-Triac TLP3064 Office Machine Household Use Equipment Triac Driver Solid State Relay The TOSHIBA TLP3064 consists of a zero voltage crossing turn-on photo-triac optically coupled to a GaAAs infrared emitting diode in a six lead plastic DIP package. * * * * * * Peak off-state voltage: 600V(min.) Trigger LED current: 3mA(max.) On-state current: 100mA(max.) Isolation voltage: 5000Vrms(min.) UL recognized: UL1577, file no. E67349 Option(D4) type VDE approved: DIN VDE0884 / 06.92, Certificate no.83649 Maximum operating insulation voltage: 890VPK Highest permissible over voltage: 8000VPK (Note) When a VDE0884 approved type is needed, please designate the "Option(D4)" 7.62mm pich standard type * Creepage distance: 7.0mm(min.) Clearance: 7.0mm(min.) Insulation thickness: 0.5mm(min.) 10.16mm pich (LF2)type 8.0mm(min.) 8.0mm(min.) 0.5mm(min.) TOSHIBA Weight: 0.44 g 11-9A2 Unit in mm Pin Configurations(top view) 1 2 3 6 ZC 4 1: 2: 3: 4: 6: ANODE CATHODE N.C. TERMINAL 1 TERMINAL 2 (ZC : Zero-cross Circuit) 1 2002-09-25 TLP3064 Maximum Ratings (Ta = 25C) Characteristic Forward current Forward current derating (Ta 25C) LED Peak forward current (100s pulse, 100pps) Reverse voltage Junction temperature Off-state output terminal voltage On-state RMS current Detector On-state current derating (Ta 25C) Peak on-state current (100s pulse, 120pps) Peak nonrepetitive surge current (PW =10ms, DC=10%) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10s) Isolation voltage (AC, 1min., R.H. 60%) (Note 1) Ta=25C Ta=70C Symbol IF IF / C IFP VR Tj VDRM IT(RMS) IT / C ITP ITSM Tj Tstg Topr Tsol BVS Rating 30 -0.3 1 5 125 600 100 50 -1.1 2 1.2 115 -55~150 -40~100 260 5000 Unit mA mA / C A V C V mA mA / C A A C C C C Vrms (Note 1) Device considered a two terminal device=Pins 1, 2 and 3 shorted together and pins 4 and 6 shorted together. Recommended Operating Conditions Characteristic Supply voltage Forward current Peak on-state current Operating temperature Symbol VAC IF ITP Topr Min. 4.5 -10 Typ. 6 Max. 240 7.5 1 85 Unit Vac mA A C 2 2002-09-25 TLP3064 Individual Electrical Characteristics (Ta = 25C) Characteristic Forward voltage LED Reverse current Capacitance Peak off-state current Peak on-state voltage Detcetor Holding current Critical rate of rise of off-state voltage Critical rate of rise of commutating voltage Symbol VF IR CT IDRM VTM IH dv / dt dv / dt(c) Vin=240rms Ta=85C Vin=60Vrms IT=15mArms IF=10mA VR=3 V V=0, f=1MHz VDRM=600V ITM=100mA Test Condition Min. 1.2 200 Typ. 1.4 30 10 0.6 500 0.2 Max. 1.7 10 1000 3.0 Unit V A pF nA V mA V / s V / s Coupled Electrical Characteristics (Ta = 25C) Characteristics Trigger LED current Inhibit voltage Leakage in inhibited state Capacitance input to output Isolation resistance Symbol IFT VIH IIH CS RS Test Condition VT=6V, resistive load IF=rated IFT IF=rated IFT VT=rated VDRM VS=0, f=1MHz VS=500V, R.H. 60% AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min. 1x10 12 Typ. 0.8 10 14 Max. 3 50 600 Unit mA V A pF Vrms Vdc 5000 10000 10000 3 2002-09-25 TLP3064 100 IF - Ta 4.0 3.6 VF / Ta - IF Allowable forward current IF (mA) 80 60 40 20 0 20 Forward voltage temperature coefficient VF / Ta (mV / ) 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.1 0.3 0.5 1 3 5 10 30 0 20 40 60 80 100 Ambient temperature Ta () IF - VF Ta25 50 Forward current IFP - DR IF (A) 100 5000 3000 Pulse width100s Ta=25 Pulse forward IFP (mA) 1.4 1.6 1.8 2.0 2.2 IF (mA) 30 1000 500 300 Forward current 10 5 3 100 50 30 1 1.0 1.2 10 3 103 3 102 3 101 3 100 Rorward voltage VFV) 120 Duty cycle ratio DR IT(RMS)- Ta 100 R.M.S.on-state current IT(RMS) (mA) 80 60 40 20 0 20 0 20 40 60 80 100 120 Ambient temperature Ta () 4 2002-09-25 TLP3064 Normalized IFT Ta 3 VT=6V 2 2 1.2 1 3 Normalized IH Ta Trigger LED current IFT Arbitrary unit 0.5 Holding current IH Arbitrary unit 20 0 20 40 60 80 100 1.2 1 0.5 0.3 0.3 0.1 40 0.1 40 20 0 20 40 60 80 100 Ambient temperature Ta () Ambient temperature Ta () 103 Normalized IDRM Ta VDRM=Rated 1.4 Normalized VDRM Ta Off-state output terminal voltage V DRMArbitrary unit 100 Peak off-state current IDRM Arbitrary unit 1.2 10 2 1.0 0.8 101 0.6 100 0 20 40 60 80 0.4 0.2 40 20 0 20 40 60 80 100 Ambient temperature Ta () Ambient temperature Ta () Normalized VIH Ta 3 2 1.2 1 3 2 1.2 1 Normalized IIH Ta Inhibit voltage VIH Arbitrary unit 0.5 0.3 Inhibit current IIH Arbitrary unit 0.5 0.3 IFRated IFT IFRated IFT 0.1 40 20 0 20 40 60 80 100 0.1 40 20 0 20 VTRated VDRM 40 60 80 100 Ambient temperature Ta () Ambient temperature Ta () 5 2002-09-25 TLP3064 RESTRICTIONS ON PRODUCT USE * 000707EBC TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. The products described in this document are subject to the foreign exchange and foreign trade laws. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. * * * * * 6 2002-09-25 |
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